A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design

Abstract:<br><br>A process-based model (UFET) for deep-submicron bulk-silicon MOSFETs is developed and verified with numerical device simulations and measured data. The charge-based model is physical with accountings for the predominant short-channel (e.g. charge sharing drain-induced threshold reduction and velocity saturation) and extremely scaled-technology (i.e. energy quantization and polysilicon-gate depletion) effects in MOSFETs. The key to UFET is the characterization of the bias-dependent two-dimensional regions near the source/ drain junctions which can extend over a significant fraction of the metallurgical channel length. When these two-dimensional regions near the junctions are modeled the physical charge-sheet model can be applied to the remaining quasi-two- dimensional channel length to define the channel current and terminal charges without resorting to empiricism to account for the short-channel effects. Special attention paid to continuity in the derivation of the model formalism yields a physical C-infinity model applicable to analog and digital CMOS circuit design. The small number of physical process-based parameters simplifies the model calibration and renders the model suitable for predictive device/circuit simulation statistical simulations and circuit sensitivity analyses based on known or presumed process variations.<br><br>Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design by Douglas Aaron Weiser was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.