Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing: 69 (Materials Research Foundations)

The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery Properties and Technology (2) Processing and Application of Dielectrics in Silicon Carbide Devices (3) Doping by Ion Implantation (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses.Keywords: Silicon Carbide SiC Technology Processing Semiconductor Devices Material Properties Polytypism Thermal Oxidation Post Oxidation Annealing Surface Passivation Dielectric Deposition Field Effect Mobility Ion Implantation Post Implantation Annealing Channeling Surface Roughness Dry Etching Plasma Etching Ion Etching Sputtering Chemical Etching Plasma Chemistry Micromasking Microtrenching Nanocrystal Nanowire Nanotube Nanopillar Nanoelectromechanical Systems (NEMS).