AgInS2 thin films

The aim of this work is to enhance the physical properties of AgInS2 thin films and their alloys by the heat treatment. First a review of the previous works on these thin films has been made. Second the spray pyrolysis method of the synthesis of thin films based on copper indium disulphide has been detailed as well as the experimental conditions of the substrate temperature and the composition of the precursors. XRD analysis shows that it is possible to obtain AgInS2-xSex thin films by the spray pyrolysis process followed by annealing under selenium atmosphere at 450°C. CuxAg1-xInS2 compounds have been also synthesized by mixing of two aqueous solutions containing Ag+ and Cu+ ions in the starting solutions. Moreover the optical study leads to the determination of the band gaps energy the refractive index and the extinction coefficient of such films. Besides the thermal properties of these films are determined by means of the thermal deflection spectroscopy. Finally the electrical parameters of Al/AgInS2-xSex/ITO Schottky diode using the forward bias current–voltage (I–V) and capacitance–frequency (C–f) have been studied to reach the conduction mechanisms inside such diode.