Combined Effects of Radio Frequency and Electron Radiation on CMOS Inverters

<p>This research examines the measurement methodology and the results of the combined effects of electron and radio frequency irradiation (500kHz) on a CMOS Hex Inverter CD4069UB. There have been many studies in recent years on the effects of electron radiation and electromagnetic interference on integrated circuits however the combined effects have not been measured. A major obstacle for in-situ electron irradiation experiments is the over current hazard that exists to measurement equipment that comes from taking real-time in-situ measurements. To overcome this a test circuit was designed and built to allow for real-time in-situ measurement of the output voltage current and the inverter power. This test circuit provides real-time measurement of the inverter's threshold voltage with respect to electron dose.</p><p>This work has been selected by scholars as being culturally important and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact and remains as true to the original work as possible. Therefore you will see the original copyright references library stamps (as most of these works have been housed in our most important libraries around the world) and other notations in the work.</p><p>This work is in the public domain in the United States of America and possibly other nations. Within the United States you may freely copy and distribute this work as no entity (individual or corporate) has a copyright on the body of the work.</p><p>As a reproduction of a historical artifact this work may contain missing or blurred pages poor pictures errant marks etc. Scholars believe and we concur that this work is important enough to be preserved reproduced and made generally available to the public. We appreciate your support of the preservation process and thank you for being an important part of keeping this knowledge alive and relevant.</p><br>