Compact Modeling for MOSFET Devices

Compact models of devices are used in circuit simulators in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits thus calling for accurate and reliable compact models an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs undoped DG MOSFETs undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators.We also show the impact of important geometrical parameters such as source and drain thickness fin spacing spacer width on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.