Creation of photomasks by laser maskless lithography

Photolithography occupies the main place in modern technology for the manufacture of microelectronic products. The technological process of photolithography consists of several basic operations: preparing the surface of a semiconductor wafer applying a layer of photoresist to the surface of the wafer drying the photoresist exposing developing and hardening the photoresist controlling the geometric dimensions of the image etching the film washing the wafer after etching removing the photoresist film from the surface control of processed plates. The aim of the work was to obtain photomasks with the minimum parameters possible for this equipment. For this the influence of the exposure time and the development time on the parameters of photomasks (the nature of the pattern) obtained by the method of maskless laser lithography on the exposure installation Heidelberg µPG501 was investigated. As a result of the work photomasks with geometric parameters of 2 μm were made while the optimal exposure time of 35 ms and the development time of 60 s were set for this batch.