Current and Breakdown Voltages in 3C-SiC Lateral Power MOSFET

Silicon carbide is the only WBG semiconductor that possesses a high-quality native oxide suitable for use as an MOS insulator in electronic devices. Thermal oxidation of SiC produces a layer of SiO2 on the surface while the carbon atoms from the SiC form CO which escapes as a gas. Thus it is possible to make all the devices found in silicon IC technology in SiC including high quality stable MOS transistors and MOS integrated circuits.