Dopants and Defects in Semiconductors

<p>Praise for the First Edition</p><p>The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … an easy reading broad introductory overview of the field <br>?<i>Materials Today</i></p><p>… well written with clear lucid explanations …<br><i>?Chemistry World</i></p><p>This revised edition provides the most complete up-to-date coverage of the fundamental knowledge of semiconductors including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects offering a solid foundation for experimental methods and the theory of defects in semiconductors.</p><p>Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU) Pullman Washington. He received a Physics Ph.D. from the University of California (UC) Berkeley.</p><p>Eugene E. Haller is a professor emeritus at the University of California Berkeley and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel Switzerland.</p>