Electrical and switching behavior of quaternary defect chalcopyrite

Structural properties dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity σDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy ΔEσ indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.