Electrical Properties of n-GaN based MOS type Schottky Junctions

III-nitride semiconductor materials specially gallium nitride (GaN) have attracted significantly in the fabrication of high power high frequency and high temperature devices such as metal/oxide/semiconductor field effect transistors (MOSFETS) heterojunction field effect transistors (HFET’s) and high electron mobility transistors (HEMT’s). However metal/semiconductor (MS) junctions in these devices may suffer from high leakage-current and low break-down voltage which limits the device performance reliability and stability. This could restrain by employing a thin insulator/interlayer between the metal and semiconductor. The formation of high-quality Schottky junctions with low-leakage current and low ideality factor by insertion of a thin insulator/interlayer in the middle of the metal and semiconductor is challenging task. Hence the detailed investigations are prerequisite on the formation of a thin insulator/interlayer in the middle of the metal and semiconductor to achieve high barrier height with low ideality factor and good thermal stability.