Electrodeposition of CuIn1-xGaxSe2 Materials for Solar Cells

<p>This report describes our scientific understanding of the CIGS materials system solar cells and processes. Through DOE support the investigators developed much of the technology and device fabrication infrastructure applied to electrodeposited (ED) materials. The electrodeposition process is simple and fast and can synthesize multinary precursors for subsequent processing into CuInxGa1-xSe2 (CIGS) thin-film absorbers for solar cells. The device fabricated by using electrodeposited CIGS precursor layers resulted in total-area conversion efficiencies up to 15.4%. As-deposited precursors are Cu-rich CIGS. Additional In Ga and Se (up to 50%) are added to the precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to about Cu0.95In0.75Ga0.25Se2. The ED device parameters are compared with those of an 18.8% PVD device.</p><p>This work has been selected by scholars as being culturally important and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact and remains as true to the original work as possible. Therefore you will see the original copyright references library stamps (as most of these works have been housed in our most important libraries around the world) and other notations in the work.</p><p>This work is in the public domain in the United States of America and possibly other nations. Within the United States you may freely copy and distribute this work as no entity (individual or corporate) has a copyright on the body of the work.</p><p>As a reproduction of a historical artifact this work may contain missing or blurred pages poor pictures errant marks etc. Scholars believe and we concur that this work is important enough to be preserved reproduced and made generally available to the public. We appreciate your support of the preservation process and thank you for being an important part of keeping this knowledge alive and relevant.</p><br>