Estimation of Lattice Strain by X���Ray Analysis

Wider Bandgap in II−VI semiconductor nanoparticles is important and advantageous for various potential applications including visible light photo−catalysis. Due to the presence of polycrystalline aggregates the crystallite size of the particles is not generally the same as the particle size. Lattice strain is a measure of the distribution of lattice constants arising from crystal imperfections (lattice dislocation) triple junction contact or sinter stresses stacking faults coherency stresses etc. X−Ray Diffraction (XRD) analysis is powerful technique to estimate the crystallite size and lattice strain. In this present work a comparative evaluation of the mean particle size of Ni doped CdS nanoparticles with different molar concentrations obtained from XRD broadening reported.