Fabrication and Characterization of Semiconductor Nanowires

One-dimensional semiconductor nanowires are considered to be promising materials for future nanoelectronic applications. However before these nanowires can be integrated into such devices a thorough understanding of their growth behaviour is necessary. In particular methods that allow the control over nanowire growth are deemed especially important as it is these methods that will enable the control of nanowire dimensions such as length and diameter. The production of nanowires with high-aspect ratios is vital in order to take advantage of the unique properties experienced at the nanoscale thus allowing us to maximise their use in next-generation electronics. Additionally the development of low-resistivity interconnects is desirable in order to connect such nanowires in multi-nanowire components. Consequently this book aims to discuss the synthesis and characterisation of semiconductor nanowires and metal interconnects as they apply to future electronics applications.