Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides Epitaxy Selfassembly and Optoelectronics

The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm and In concentration (x) ranging from 0 to 1 on different substrates (Si Sapphire SiC glass) using Plasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as the specific film morphology the self-assembled nanostructures were created. The mechanism of carrier confinement in these structures are described. Theoretically and experimentally shown that the electron localization may exist in the nanostructures by piezoelectric field from AlN buffer layer. Optical investigation of the fundamental bandgap Eg of InxAl1-xN in the temperature range 70-700K and compositional range (0<x<1) Raman far-infrared and luminescence properties are described. The light-emitting spots have been observed in temperature dependence of absorption coefficient at 2.26 eV for self-nanostructured InAlN.