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About The Book
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<p>High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-<i>k</i> dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level.</p><ul> <p> </p> <li>Provides basic knowledge about FET devices </li> <p> </p> <li>Presents the motivation behind multi-gate FETs including current and future trends in transistor technologies</li> <p> </p> <li>Discusses fabrication and characterization of high-k materials</li> <p> </p> <li>Contains a comprehensive analysis of the impact of high-<i>k</i> dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures</li> <p> </p> <li>Offers detailed application of high-k materials for advanced FET devices</li> <p> </p> <li>Considers future research directions</li> </ul><p>This book is of value to researchers in materials science electronics engineering semiconductor device modeling IT and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.</p>