High-k/Metal-gate Devices for Future CMOS Technology

The present work addresses the investigation of high-? dielectrics and their applicability in CMOS-devices using metal-gate electrodes. The contents firstly include the deposition of zirconium dioxide and hafnium dioxide from the gas phase using organometallic precursors and their physico-chemical characterization. Furthermore these material systems are investigated regarding their thermodynamical stability.In the following MOS-capacitors are fabricated by the selective deposition of gate electrodes made from aluminum molybdenum nickel or titanium-nitride and characterized regarding their electrical behavior. Results within this work demonstrate that well balanced and correctly applied annealing of the devices clearly improves electrical behavior. We attribute these materials high potential to be applied in near-future CMOS-technology.