III-Nitride Materials

<p><span style=color: rgba(23 43 77 1)>Ⅲ-nitride materials possess superior optical and electrical properties due to direct bandgap and polarization effects. Light-emitting devices are already common in daily lighting traffic signage landscape lighting etc. Additionally they hold promise for next-generation displays e.g. microLED displays as well as field effect transistors (FETs) for example high electron mobility transistors (HEMTs) and p-channel FETs. The investigation of antipolar (N-polar) epitaxy and devices is also flourishing. The following Special Issue reprint gathers research achievements related to III-nitride materials and their associated devices covering growth methods device fabrication technology structural design and physical mechanisms of III-nitride semiconductors devices etc.</span></p><p><br></p><p><br></p>