Impact Ionization in Presence of Electric and Magnetic Fields

Both the theoretical and experimental studies on the impact ionization phenomena under electric and magnetic fields are the primary subject matter of this book. Detailed theoretical modelling of impact ionization phenomena and consequent breakdown of a p-n junction have been presented. The theories discussed in this book are validated by using appropriate experimental measurements. The 4H-SiC has been chosen as the semiconductor material for the experimental studies. However the theories and models presented in this book are valid for any semiconductor material.