Investigations on Magnetron Sputtered Titanium based Oxide Films

The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials titanium dioxide (TiO2) is a potential candidate because of its high energy band gap refractive index and dielectric constant.