Memristive Properties of Thin Film Cuprous Oxide

<p>Memristive properties of thin film copper oxides with different grain sizes were characterized using tunneling atomic force microscopy (TUNA) and optical reflection measurements. The thin films containing copper ions of different chemical states were prepared by thermal oxidation of metallic copper thin films deposited via magnetron sputtering onto silicon wafer substrates at an elevated temperature for various lengths of time. The TUNA measurements showed a memristive hysteresis in the I-V curves under an applied bias profile with an initial bias of -3.5V a ramp up to 3.5V and subsequent return to -3.5V. Histogram analysis of the barrier height distribution for the forward and backward bias indicated that the barrier height fluctuates in a narrow range of bias voltages that are related to electrochemical potentials for oxidation/reduction of copper ions. Changes in chemical state of copper atoms were identified by optical reflectance measurements in UV-VIS-NIR wavelength regions. The growth of the thin films including grain size were characterized by topographic AFM imaging and changes in optical absorption bands due to the quantum size confinement effects.</p><p>This work has been selected by scholars as being culturally important and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact and remains as true to the original work as possible. Therefore you will see the original copyright references library stamps (as most of these works have been housed in our most important libraries around the world) and other notations in the work.</p><p>This work is in the public domain in the United States of America and possibly other nations. Within the United States you may freely copy and distribute this work as no entity (individual or corporate) has a copyright on the body of the work.</p><p>As a reproduction of a historical artifact this work may contain missing or blurred pages poor pictures errant marks etc. Scholars believe and we concur that this work is important enough to be preserved reproduced and made generally available to the public. We appreciate your support of the preservation process and thank you for being an important part of keeping this knowledge alive and relevant.</p>