Metallization of high efficiency c-Si solar cells based on Cu-plating

To improve the performance of the high efficiency c-Si solar cells within the PVMD group at TU Delft several front metallization methods were investigated. The objective was to decrease the series resistance which would lead to an increase in FF and thus efficiency. Three different cell structure are examined; i) a poly-poly cell with SiNx as an ARC ii) a hybrid solar cell and iii) a silicon heterojunction (SHJ) device. Last two structures have a conductive TCO layer as a top layer.