Nanoscale MOS Transistors

Written From An Engineering Standpoint This Book Provides The Theoretical Background And Physical Insight Needed To Understand New And Future Developments In The Modeling And Design Of N- And P-Mos Nanoscale Transistors. A Wealth Of Applications Illustrations And Examples Connect The Methods Described To All The Latest Issues In Nanoscale Mosfet Design. Key Areas Covered Include: Transport In Arbitrary Crystal Orientations And Strain Conditions And New Channel And Gate Stack Materials All The Relevant Transport Regimes Ranging From Low Field Mobility To Quasi-Ballistic Transport Described Using A Single Modeling Framework Predictive Capabilities Of Device Models Discussed With Systematic Comparisons To Experimental Results