Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys

<p>Advances in crystal growth techniques have allowed increased quality in growth of bulk ternary InxGa1-xAs. Here the optical and electrical properties of samples grown through the vertical Bridgman (or multi-component zone melting growth) method have been investigated through photoluminescence spectroscopy and Hall effect measurements. Indium mole fractions varied from 0.75 for 1. Hall effect measurements at temperatures ranging from 10 to 300 K revealed moderate n-type doping with carrier concentrations ranging from 1.5 to 9.6 10 16 cm -3 at 10 to 15 K. Carriers from deep donor levels became appreciable between 50 and 100 K. Hall mobility increased with rising indium content and mobility values at 15 K ranged from 1.5 10 4 cm 2/(V's) for In0.75Ga0.25As to 3.5 10 4 cm 2/(V's) for InAs. Mobility variation with temperature showed ionized impurity scattering to be dominant at low temperatures with optical phonon scattering becoming dominant near 100 K. Laser excitation power dependent photoluminescence measurements were performed at 12 K and temperature dependent photoluminescence measurements were performed at temperatures ranging from approximately 12 to 140 K. Photoluminescence measurements showed band-to-band and donor-acceptor pair transitions. 12 K band-to-band photoluminescence peak positions loosely followed predicted band gaps and position dependent photoluminescence measurements revealed varying degrees of uniformity across the samples studied.</p><p>This work has been selected by scholars as being culturally important and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact and remains as true to the original work as possible. Therefore you will see the original copyright references library stamps (as most of these works have been housed in our most important libraries around the world) and other notations in the work.</p><p>This work is in the public domain in the United States of America and possibly other nations. Within the United States you may freely copy and distribute this work as no entity (individual or corporate) has a copyright on the body of the work.</p><p>As a reproduction of a historical artifact this work may contain missing or blurred pages poor pictures errant marks etc. Scholars believe and we concur that this work is important enough to be preserved reproduced and made generally available to the public. We appreciate your support of the preservation process and thank you for being an important part of keeping this knowledge alive and relevant.</p>