Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications

<p>The objectives of this project were to obtain a fundamental understanding of wide-gap chalcopyrite semiconductors and photovoltaic devices. Information to be gathered included significant new fundamental materials data necessary for accurate modeling of single- and tandem-junction devices basic materials science of wider-gap chalcopyrite semiconductors to be used in next-generation devices and practical information on the operation of devices incorporating these materials. Deposition used a hybrid sputtering and evaporation method shown previously to produce high-quality epitaxial layers of Cu(InGa)Se2 (CIGS). Materials analysis was also provided to assist members of the National CIS Team of which through this contract we were a member. Solar cells produced from resulting single-crystal epitaxial layers in collaboration with various members of the CIS Team were used to determine the factors limiting performance of the devices based on analysis of the results. Because epitaxial growth allows us to determine the surface orientation of our films specifically by choice of the substrate surface on which the film is grown a major focus of the project concerned the nature of (110)-oriented CIGS films and the performance of solar cells produced from these films. We begin this summary with a description of the results for growth on (110) GaAs which formed a basis for much of the work ultimately conducted under the program.</p><p>This work has been selected by scholars as being culturally important and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact and remains as true to the original work as possible. Therefore you will see the original copyright references library stamps (as most of these works have been housed in our most important libraries around the world) and other notations in the work.</p><p>This work is in the public domain in the United States of America and possibly other nations. Within the United States you may freely copy and distribute this work as no entity (individual or corporate) has a copyright on the body of the work.</p><p>As a reproduction of a historical artifact this work may contain missing or blurred pages poor pictures errant marks etc. Scholars believe and we concur that this work is important enough to be preserved reproduced and made generally available to the public. We appreciate your support of the preservation process and thank you for being an important part of keeping this knowledge alive and relevant.</p>