<p>This book&nbsp;is written&nbsp;as an introductory textbook on Resistive Random Access Memory (ReRAM). ReRAM is a prominent emerging memory among other competing Non-Volatile Memories (NVM) seeking to replace flash memory. This book&nbsp;is based&nbsp;on the&nbsp;author's&nbsp;peer-reviewed research&nbsp;conducted&nbsp;at the Chair of Computer Architecture FAU Germany.&nbsp;Referring to his research and the most relevant research from the literature the author presents the developments in this field&nbsp;concisely.&nbsp;The purpose is to clarify basic concepts and introduce the reader to ReRAM with an emphasis on circuit design. Hence this book is written for university students considering a career in the semiconductor industry. Since&nbsp;the&nbsp;author's&nbsp;research was conducted&nbsp;in collaboration&nbsp;with a silicon foundry hardware engineers will find this book practical and industry-relevant. Researchers in the field of In-Memory Computing will also benefit from this book since the NVM array is the&nbsp;basic&nbsp;substrate for such computing paradigms.&nbsp;</p><p>This three-part book condenses the research and development of the last decade into eight chapters.&nbsp;In&nbsp;Part I a good foundation is laid&nbsp;for understanding the individual device structure its electrical characteristics and modeling methodology.&nbsp;The different array configurations in which these memory devices&nbsp;are fabricated&nbsp;are also discussed. In Part II the peripheral&nbsp;circuits&nbsp;-the&nbsp;CMOS circuits around the ReRAM array are discussed. They include sense amplifiers programming circuits and row/column access circuits. Recent developments&nbsp;such&nbsp;as the possibility to perform&nbsp;certain&nbsp;computing tasks in the ReRAM&nbsp;array&nbsp;are discussed&nbsp;in Part III.</p>
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