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About The Book
Description
Author(s)
<p>This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node its process complexity variability and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations. </p>
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Details
ISBN 13
9780367573553
Publication Date
-30-06-2020
Pages
-156
Weight
-275 grams
Dimensions
-155.96x233.93x8.67 mm
