Study of Atomic Layer Deposited HfO2/Si Interfaces

To continue scaling of MOS devices SiO2 has to be replaced by high-K dielectric material. HfO2 is one of the prime materials with high dielectric constant has the potential to replace SiO2. HfO2 has been extensively studied by a number of authors. Still there are a number of issues that need to be addressed before to further scale down HfO2 based MOS devices. This book presents the studies done with HfO2 for future MOS device applications.