SynthesisCharacterization of high k materials Device Characteristics

This book is about the synthesisCharacterization of high k nano materials like La2o3 LaAlo3 and simulation of device characteristics for future CMOS applications.Synthesis and characterization of La2O3 and LaAlO3 materials by chemical methods like combustion method pechini method and gelation precipitation method. (ii) Simulation of device characteristics for La2O3 and LaAlO3 materialsfor Metal Oxide Semiconductor Field Effect Transistors is done by Quantum wise and Nanohub simulation tools. Also design of Inverter NAND NOR gates are investigated for High K dielectric La2O3 gate materials (K=27) using Arizona State Universities Predictive Technology Models.