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About The Book
Description
Author
Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability temperature dependence and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.
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Details
ISBN 13
9783838399638
Publication Date
-07-09-2010
Pages
-152
Weight
-205 grams
Dimensions
-150x220x8.41 mm
