Wide Bandgap Based Devices: Design Fabrication and Applications

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that more than 50 years ago the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller faster and more efficient than their counterpart Si-based components these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore in this frame a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors such as GaN and SiC have been created and are thus referred to as ultra-wide bandgap materials. These materials which include AlGaN AlN diamond Ga2O3 and BN offer theoretically superior properties including a higher critical breakdown field higher temperature operation and potentially higher radiation tolerance. These attributes in turn make it possible to use revolutionary new devices for extreme environments such as high-efficiency power transistors because of the improved Baliga figure of merit ultra-high voltage pulsed power switches high-efficiency UV-LEDs and electronics. This Special Issue aims to collect high quality research papers short communications and review articles that focus on wide bandgap device design fabrication and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits held in France (WOCSDICE 2019) which brings together scientists and engineers working in the area of III-V and other compound semiconductor devices and integrated circuits. In particular the following topics are addressed: - GaN- and SiC-based devices for power and optoelectronic applications - Ga2O3 substrate development and Ga2O3 thin film growth doping and devices - AlN-based emerging material and devices - BN epitaxial growth characterization and devices